PLASMA ÑHEMICAL TECHNOLOGIES FOR PROCESSING
MATERIALS OF MICRO- AND NANOELECTRONICS ON A BASE OF BEAM PLASMA DISCHARGE
Scientific supervisor: Evgeniy G. SHUSTIN, Dr. Sc.,
head of research group of IRE RAS (Fryazino branch), E-mail:
shustin@ms.ire.rssi.ru
In plasma
processing reactors used for deposition of thin films, etching and modification
of a surface of materials for microelectronics, the control of the
characteristics of ions bombarding a treated surface is rather important for
optimization of quality of processing. At ion etching of materials a cumulative
distribution function of ions on energies (IEDF) and angular distribution of
ions reaching the surface, critically affect to a rate and level of an
anisotropy of etching. The control of a spatial distribution of bombarding
particles in such discharges is important for a spraying of films with rather
homogeneous structure. The control of the shape of IEDF leads to selectivity of
physical and chemical processes on a surface of a material, that is especially
important in the applications for surface modification.
In Institute of Radio
Engineering and Electronics of Russian Academy of
sciences is found out the effect of ion emission from area of beam plasma
discharge (BPD) in a low magnetic field of an ion flow with energies, optimal
for the tasks of etching and spraying of materials of microelectronics.
Mechanisms of acceleration of the ion flow, connection of parameters of ion
flows with the characteristics of waves excited in BPD are researched, the
means of control of energy and density of ions are determined. The researches
carried out recently have shown a capability of change of mean energy of the
ions bombarding a surface over the rim of discharge in an interval 10-80 eV at
small change of parameters of BPD.
The approbation
of the technology of etching by ion flows from BPD of semiconducting
heterostructures Al-GaAs/InGaAs/GaAs (P-HEMT), grown up on substrates GaAs and
perspective for creation of microwave transistors of a millimeter-wave band is
carried out. The influence of such processing on density and mobility of
electrons, sensing to defects imported during etching was researched. The
presence of effect of etching with rate acceptable to industrial application,
without a degradation of heterostructure parameters is shown, that testifies to
small density of radiation violations and possibility of using BPD reactors in
the technology of manufacturing of heterostructure HEMT microwave devices.
There is no tags of a non-uniformity of etching on a patterns of 60 mm in
diameter.
In these
activities Institute of a microwave semiconductor electronics of RAS and chair
of plasma physics of Moscow Engineering Physical institute (MEPhI) take part.
By way of activities of 2007 - creation of the pilot technological plant is
planned. This plant will be used for manufacturing sub-0.1 micron gates of
field-effect transisors on base of semiconducting heterostructures
GaAs/AlGaAs/InGaAs (P-HEMT) on substrates GaAs and isomorphic heterostructures
InGaAs/InAlAs/InP (HEMT) on substrates InP. The technology provides:
-
plasma
enhanced chemical anisotropic etching of sub-0.1 micron slots in dielectric
films SiO2 and Si3N4;
-
plasma
enhanced chemical selective anisotropic etching with low ion energy of sub-0.1
micron riffles in layers of semiconducting heterostructures through a mask of
dielectric with high uniformity on a surface of slices of diameter up to 60 mm.
Will be determined also prospects of the given type of plasma
processing reactor for deposition of doped diamond-like films with the
controlled electrophysical characteristics.
