Yulii Vyacheslavovich Kislinskii

Born: September 27th, 1963, in Ukraine (USSR)
Nationality: Russian Federation
Marital status: Single
Address: Moscow 125009, Mokhovaya st. 11-7, Kotelnikov Institute of Radio Engineering and Electronics Russian Academy of Sciences
E-mail: mail to Yulii V. Kislinskii
Tel/Fax: (7495)-629-74-31/(7495)-629-36-78
ResearcherID: A-9607-2014
ORCID: 0000-0003-4281-8604
Yulii V. Kislinskii


1985 M.Sc. degree from Moscow institute of Steel and Alloys
2012 PhD thesis “Electron transport in bicrystal junctions and hybrid hetero-structures from cuprate superconductors” in the Kotel`nikov Institute of Radio Engineering and Electronics Russian Academy of Sciences


1985–1988 Engineer in Institute Volna, Moscow. Specialization - thick film technology
1988-1990 Senior engineer in Centre of physics and technology, Moscow. Specialization – measurement of complementary MOS devices
1991-1993 Postgraduate student in Institute of crystallography RAS, Moscow. Specialization physics of solid state
1993-2002 Junior researcher, later researcher, in the Institute of crystallography. Scientific interest: physics of bicrystal high – TC Josephson junctions
2002-present Researcher in Kotelnikov Institute of Radio-Engineering and Electronics RAS, Moscow


    Microelectronics – Josephson devices, semiconductor devices.

Current research interests:


    Co-author of more then 40 publications in refereed journals, h-index 7 by the RID.

    During last 5 years author of 10 contributions to conferences.